Surface treatment of silicon or silicon germanium surfaces using organic radicals

ABSTRACT

Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include performing an organic radical based surface treatment process on a workpiece. The organic radical based surface treatment process can include generating one or more species in a first chamber. The surface treatment process can include mixing one or more hydrocarbon molecules with the species to create a mixture. The mixture can include one or more organic radicals. The surface treatment process can include exposing a semiconductor material on the workpiece to the mixture in a second chamber.

PRIORITY CLAIM

The present application claims the benefit of priority of U.S.Provisional Application Ser. No. 62/567,295, titled “Surface Treatmentof Silicon and Carbon Containing Films by Remote Plasma with OrganicPrecursors,” filed Oct. 3, 2017, which is incorporated herein byreference for all purposes.

FIELD

The present disclosure relates generally to surface treatment of aworkpiece using organic radicals.

BACKGROUND

Plasma processing is widely used in the semiconductor industry fordeposition, etching, resist removal, and related processing ofsemiconductor wafers and other substrates. Plasma sources (e.g.,microwave, ECR, inductive, etc.) are often used for plasma processing toproduce high density plasma and reactive species for processingsubstrates. Post-implantation photoresist, post-etch residue, and othermask and/or material removal have been accomplished using plasma drystrip processes. In plasma dry strip processes, neutral particles from aplasma generated in a remote plasma chamber pass through a separationgrid into a processing chamber to treat a substrate, such as asemiconductor wafer.

SUMMARY

Aspects and advantages of embodiments of the present disclosure will beset forth in part in the following description, or may be learned fromthe description, or may be learned through practice of the embodiments.

One example aspect of the present disclosure is directed to a method forprocessing a workpiece. The workpiece can include a semiconductormaterial. In one example implementation, a method can include performingan organic radical based surface treatment process on a workpiece. Theorganic radical based surface treatment process can include generatingone or more species in a first chamber. The surface treatment processcan include mixing one or more hydrocarbon molecules with the species tocreate a mixture. The mixture can include one or more organic radicals.The surface treatment process can include exposing a semiconductormaterial on the workpiece to the mixture in a second chamber.

Other example aspects of the present disclosure are directed to systems,methods, and apparatus for surface treatment of workpieces.

These and other features, aspects and advantages of various embodimentswill become better understood with reference to the followingdescription and appended claims. The accompanying drawings, which areincorporated in and constitute a part of this specification, illustrateembodiments of the present disclosure and, together with thedescription, serve to explain the related principles.

BRIEF DESCRIPTION OF THE DRAWINGS

Detailed discussion of embodiments directed to one of ordinary skill inthe art are set forth in the specification, which makes reference to theappended figures, in which:

FIG. 1 depicts an example workpiece structure containing a siliconand/or silicon germanium material;

FIG. 2 depicts an example high aspect ratio structure on a workpiece;

FIG. 3 depicts an example plasma processing apparatus according toexample embodiments of the present disclosure;

FIG. 4 depicts a flow diagram of an example surface treatment processaccording to example embodiments of the present disclosure;

FIG. 5 depicts a flow diagram of an example surface treatment processaccording to example embodiments of the present disclosure;

FIG. 6 depicts example post plasma gas injection during a surfacetreatment process according to example embodiments of the presentdisclosure;

FIG. 7 depicts an example source of hydrogen radicals according toexample embodiments of the present disclosure;

FIG. 8 depicts a flow diagram of an example method according to exampleembodiments of the present disclosure;

FIG. 9 depicts flow diagram of an example method according to exampleembodiments of the present disclosure;

FIG. 10 depicts example modification of a surface wetting angle of asilicon containing dielectric material according to example embodimentsof the present disclosure;

FIG. 11 depicts a flow diagram of an example method according to exampleembodiments of the present disclosure; and

FIG. 12 depicts a flow diagram of an example method according to exampleembodiments of the present disclosure.

DETAILED DESCRIPTION

Reference now will be made in detail to embodiments, one or moreexamples of which are illustrated in the drawings. Each example isprovided by way of explanation of the embodiments, not limitation of thepresent disclosure. In fact, it will be apparent to those skilled in theart that various modifications and variations can be made to theembodiments without departing from the scope or spirit of the presentdisclosure. For instance, features illustrated or described as part ofone embodiment can be used with another embodiment to yield a stillfurther embodiment. Thus, it is intended that aspects of the presentdisclosure cover such modifications and variations.

Example aspects of the present disclosure are directed to surfacetreatment processes for treating silicon and silicon germanium surfacesand/or treating silicon containing dielectric films on a workpiece, suchas a semiconductor wafer. Dry strip processes can be performed to treata workpiece during semiconductor processing. For instance, dry stripprocesses can be used for photoresist removal, chemical residue removal,or other material removal.

In some example dry strip processes, a workpiece can be placed on apedestal or other substrate in a processing chamber. A plasma can beinduced (e.g., using an inductively coupled plasma source) in a remoteplasma chamber to generate ions and neutral radicals in a process gas orother mixture. A separation grid separating the plasma chamber from theprocessing chamber can filter ions and allow passage of the neutralradicals through holes in the separation grid to the processing chamber.The neutral radicals can be exposed to the surface of the workpiece toremove material from the workpiece (e.g., photoresist, residue, etc.).

During the dry strip process, several requirements may need to besatisfied including, for instance, a high photoresist strip rate, a highmaterial-etch selectivity of the photoresist materials being removedrelative to the underlying material, the prevention of oxidation of theunderlying materials such as silicon and silicon germanium, and criticaldimension (CD) control.

For example, FIG. 1 illustrates damage 55 that can occur tosemiconductor material 53 on a workpiece 50 during a dry strip surfaceprocess. Neutral radicals 51 can be used to remove photoresist 52 (andother surface residues). The neutral radicals can also attack thin filmmaterials 53, which resides on the surface of the semiconductorsubstrate 54. The thin film materials 53 can be, in some embodiments, asilicon (Si) thin film or a silicon-germanium (SiGe) thin film and thesemiconductor substrate 54 can be a Si substrate.

The thin film materials such as Si and/or SiGe can be also prone tooxidation in the process, and/or upon air ambient exposure andsubsequent fabrication steps, leading to materials loss. Advancedsemiconductor structures are going three dimensional, and a materialsloss can lead to a change in critical dimension (CD) of devices thus adeterioration of device integrity. Therefore, reducing thin film losssuch as Si and/or SiGe film loss during the dry strip process iscritical for preserving device performance.

According to example aspects of the present disclosure, an organicradical based surface treatment process can be performed in conjunctionwith a dry strip process and/or as a separate step from the dry stripprocess to protect thin film surfaces such as silicon surfaces andsilicon germanium surfaces on the workpiece. More particularly, theorganic radical based surface treatment process can expose asemiconductor (e.g., a silicon and/or silicon germanium) surface toneutral organic radicals (e.g., CH₃ radicals). The organic radical basedsurface treatment process can result in attachment of organic radicals(e.g., methylation based on CH₃ radicals in a gas phase) on at least aportion of the semiconductor surface. The organic radicals can lead toformation of a protective layer (e.g., a passivation layer) on thesilicon and/or silicon germanium layer, reducing materials damage duringand after a dry strip process. In this manner, improved criticaldimension control can be obtained for the dry strip process.

In some embodiments, the organic radical based surface treatment processcan include generating one or more species in a plasma chamber that isseparated from the processing chamber by a separation grid. The speciescan be generated, for instance, by inducting a plasma in a process gas.In some embodiments, the process gas can be an inert gas, such ashelium, argon, xenon, etc. An inductive plasma generated using aninductive plasma source in the inert gas can generate one or moreexcited inert gas molecules (e.g., excited helium molecules).

In some embodiments, the organic radical based surface treatment processcan include generating one or more hydrogen radicals in a plasma chamberthat is separated from the processing chamber by a separation grid. Thehydrogen radicals can be generated, for instance, by inducing a plasmain a process gas. The process gas, for instance, can be a mixtureincluding hydrogen (H₂) and nitrogen (N₂) or can be a mixture includingH₂ and helium (He) or can be a mixture including H₂ and Argon (Ar). Insome other embodiments, the hydrogen radicals can be generated, forinstance, using a heated filament, such as a heated tungsten filament.

The organic radical based surface treatment process can includefiltering ions while allowing the passage of neutrals (e.g. excitedinert gas molecules and/or hydrogen radicals) to generate a filteredmixture with neutrals for exposure to the workpiece. For instance, aseparation grid can be used to filter ions generated in the plasmachamber and allow passage of neutrals through holes in the separationgrid to the processing chamber for exposure to the workpiece.

In some embodiments, the neutrals can include one or more organicradicals, such as methyl (CH₃) radicals. The organic radicals can reactwith the surface of the Si and/or SiGe layers (e.g., via methylation) toform a protective layer for a dry strip process. The organic radicalscan be mixed with other gases and radicals, such as hydrogen.

In some embodiments, the organic radicals (e.g., CH₃ radicals) can begenerated by dissociating one or more hydrocarbon molecules in theplasma chamber. Example hydrocarbon molecules can include, for instance,non-cyclic alkanes C_(n)H_(2n+2) where n is greater than or equal to oneand less than or equal to 10. For instance, the hydrocarbon moleculescan include non-cyclic alkanes, such as methane CH₄, ethane C₂H₆,propane or iso-propane C₃H₈, etc.

In some embodiments, the hydrocarbon molecules can include cyclicalkanes C_(n)H_(2n), where n is greater than or equal to five and lessthan or equal to ten. For instance, the hydrocarbon precursor caninclude cyclic alkanes such as cyclopentane C₅H₁₀, cyclohexane C₆H₁₂,methyl-cyclohexane, C₇H₁₄, dimethyl-cyclohexane C₈H₁₆,1,3,5-trimethyl-cyclohexane C₉H₁₈, etc. In some embodiments, thehydrocarbon precursors can include alkenes C_(n)H_(2n), where n isgreater than or equal to two and less than or equal to ten, such asethylene C₂H₄, propene C₃H₆, etc.

In some embodiments, the organic radicals (e.g., CH₃ radicals) can begenerated by injecting a gas into post plasma mixtures. For instance, aplasma (e.g., H₂ plasma or inert gas plasma, such as He plasma) can begenerated in a remote plasma chamber. The mixture can pass through aseparation grid assembly for ion filtering. Post ion filtering, ahydrocarbon (CH₄, etc.) can be injected into the filtered mixture forgeneration of organic radicals (e.g., CH₃ radicals).

The organic radicals can be generated using other approaches. Forinstance, organic radicals can be generated using pyrolysis (thermaldecomposition) of molecules (e.g., azomethane CH₃—N═N—CH₃) orUV-assisted molecule dissociation (e.g., acetone CH₃COCH₃).

The workpiece can be supported on a pedestal. The pedestal can include atemperature regulation system (e.g., one or more electrical heaters)used to control a temperature of the workpiece temperature duringprocessing. In some embodiments, the organic radical based surfacetreatment process can be carried out with the workpiece at a temperaturein the range of about 20° C. to about 500° C.

The organic radical based surface treatment process can be performed inconjunction with a dry strip process. For instance, in some embodiments,the organic radical based surface treatment process can be carried outin the same process step as a dry strip process. In this exampleembodiment, a plasma source (e.g., inductively coupled plasma source,capacitively coupled plasma source, etc.) can be used to generate one ormore hydrogen radicals from a process gas in a plasma chamber. Theprocess gas can include, for instance, a mixture including H₂ and N₂and/or a mixture including H₂ and He and/or a mixture including H₂ andAr. The plasma source can also be used to dissociate one or morehydrocarbon molecules to generate organic radicals (e.g., CH₃ radicals)as part of the same process step. The hydrogen radicals and organicradicals can pass through a separation grid to a processing chamber forexposure to the workpiece.

In some embodiments, the organic radical based surface treatment processcan be performed as a separate step from the dry strip process. Forinstance, a method for processing a semiconductor substrate can includeperforming a dry strip process. During the dry strip process, a plasmasource can be used to generate one or more radicals for conducting a drystrip process in a plasma chamber. The radicals can pass through aseparation grid for exposure to the workpiece to carry out the dry stripprocess.

In a separate process step, one or more organic radicals (e.g., CH₃)radicals can be exposed to the workpiece as part of the organic radicalbased surface treatment process according to example embodiments of thepresent disclosure. The organic radical based surface treatment processcan be performed prior to and/or after the dry strip process.

In some embodiments, the organic radical based surface treatment processcan be carried out in conjunction with a wet process. A wet process(e.g., wet clean process and/or wet etch process) can expose theworkpiece to a wet chemical solution for removal of materials, cleaningof the workpiece, etc. The surface of some materials on the workpiececan be hydrophilic while others can be hydrophobic. In some cases, thewet chemical solutions can be aqueous (water based) or organic. Amismatch between surface hydrophilicity/hydrophobicity and chemicalsolution composition can pose challenges in device fabrication. Forinstance, during processing of workpieces with high aspect ratiostructures, a mismatch between surface hydrophilicity/hydrophobicity andchemical solution can result in either difficulty of the wet chemicalsolution accessing bottom of the high aspect ratio structures or apattern collapse due to capillary effect with too much surface tension.

In some instances, multiple materials on the workpiece are exposed inwet processes at the same time. In addition, fabrication of advancedlogic and memory devices incorporates new materials. With increasinglystringent requirements in critical dimension integrity, wet clean andwet etch processes need to be very selective. Consequently, wet chemicalformulation becomes more complex, and can represent various safetyhazards, not only with the type of chemicals involved, but also methodsof applications. With critical dimensions getting smaller and filmsgetting thinner, surface regions play a more important role in deviceperformance. Chemical solutions in wet processes can lead to significantchanges of materials surface properties, which can lead to adverseeffects on device performance.

In some cases, upon completion of wet processes, residual chemicalsolution can be trapped inside small/high-aspect-ratio structures and/orleft on workpiece surfaces. For instance, FIG. 2 depicts an example highaspect ratio structure 60 after conducting a wet process. A wet chemicalsolution 65 can be trapped in the high aspect ratio structure 60.Surface tension associated with the wet chemical solution 65 can lead tocollapse of the high aspect ratio structure, leading to collapsedstructure 62.

In some instances, the residual chemical solution can be subject toadditional oxygen and moisture uptake upon air ambient exposure. Thiscan result in particulate formation and materials corrosion, leading toundesirable device performance variation and device yielddeteriorations.

According to example aspects of the present disclosure, an organicradical based surface treatment process can modify surfacehydrophobicity/hydrophilicity (e.g., through methylation). For instance,the organic radical based surface treatment process can expose a siliconcontaining dielectric material (e.g., SiO₂ and/or Si₃N₄) to organicradicals (e.g., CH₃) to modify a surface wetting angle of the material.The organic radical based surface treatment process can be performedprior to and/or after a wet process.

For instance, in some embodiments, an organic radical based surfacetreatment process can be inserted in the manufacturing flow prior to wetprocesses for precise control of surface wetting angle. This canfacilitate chemical cleaning on wafer surface and inside patternedstructures, and at the same time modulate surface tension to avoid highaspect ratio pattern collapse.

In some embodiments, the organic radical based surface treatment processcan be inserted in the manufacturing flow prior to wet processes topassivate the surface, reduce chemical attack on substrate materialsand/or reduce undesirable material loss or material alteration (e.g.,oxidation). In this way, the organic radical based surface treatmentprocess can passivate the surface with a stable layer of organic groups.

In some embodiments, an organic radical based surface treatment processcan scavenge residual chemicals on the workpiece after the wet process.Accordingly, an organic radical based surface treatment process can beinserted in the manufacturing flow after the wet processes to reducematerials corrosion and surface deterioration, and/or to reduceparticulate formation.

An organic radical based surface treatment process according to exampleaspects of the present disclosure can be contrasted with gasmolecule-based or ion-based processes in semiconductor devicemanufacturing. Gas molecules can be used in various diffusion/anneal andchemical vapor deposition processes, and ions processes can include ionimplantation and ion etch. In general gas molecule-based processes haveno issue with surface charging but can have low reactivities at lowtemperature. By contrast, ions are highly reactive and can react at lowsurface temperature, but can have adverse effects in surface charging,surface damage and materials loss from direct ion bombardment. Incomparison to gas molecule and ion-based processes, radical basedprocesses can have high reactivity while at the same time can reduce thesurface charging/damage and materials loss issues associated with ionprocesses.

Aspects of the present disclosure are discussed with reference to a“wafer” or semiconductor wafer for purposes of illustration anddiscussion. Those of ordinary skill in the art, using the disclosuresprovided herein, will understand that the example aspects of the presentdisclosure can be used in association with any semiconductor substrateor other suitable substrate. In addition, the use of the term “about” inconjunction with a numerical value is intended to refer to within tenpercent (10%) of the stated numerical value. A “pedestal” refers to anystructure that can be used to support a workpiece.

One example embodiment of the present disclosure is directed to a methodfor processing a workpiece. The workpiece can include a semiconductormaterial (silicon and/or silicon germanium). The method can includeperforming an organic radical based surface treatment process on theworkpiece. The organic radical based surface treatment process caninclude generating one or more species in a first chamber. The surfacetreatment process can include mixing one or more hydrocarbon moleculeswith the species to create a mixture. The mixture can include one ormore organic radical. The surface treatment process can include exposingthe semiconductor material to the mixture in a second chamber.

In some embodiments, the one or more hydrocarbon molecules have achemical formula of C_(n)H_(2n+2), where n is greater than or equal to 1and less than or equal to 10. In some embodiments, the one or morehydrocarbon molecules have a chemical formula of C_(n)H_(2n), where n isgreater than or equal to 2 and n is less than or equal to 10.

In some embodiments, the one or more organic radicals are generated bydissociating the one or more hydrocarbon molecules in the first chamber.In some embodiments, the method includes filtering one or more ionsusing a separation grid separating the first chamber from the secondchamber.

In some embodiments, the one or more organic radicals are generated byreaction of the one or more hydrocarbon molecules with the species. Insome embodiments, the one or more organic radicals comprise a CH₃radical. In some embodiments, the organic radical based surfacetreatment process results in methylation on at least a portion of thesemiconductor material.

In some embodiments, the one or more species can be generated by aplasma induced in a process gas in the first chamber. In someembodiments, the process gas can be an inert gas, such as helium. Insome embodiments, the process gas includes a hydrogen gas and thespecies can include hydrogen radicals.

In some embodiments, the species can include one or more hydrogenradicals generated using a heated filament. In some embodiments, the oneor more organic radicals are generated using pyrolysis of molecules orUV-assisted molecule dissociation.

In some embodiments, the workpiece includes a silicon containingdielectric layer. In some examples, the silicon containing dielectriclayer comprises a silicon oxide layer, wherein oxygen to silicon ratioexceeds 1 in the silicon oxide layer. In some examples, the siliconcontaining dielectric layer includes a silicon nitride layer, whereinnitrogen to silicon ratio exceeds 0.5 in the silicon nitride layer.

In some embodiments, the organic radical based surface treatment processis conducted on the silicon containing dielectric layer to adjust asurface wetting angle of the silicon containing dielectric layer. Insome embodiments, a wet process can be performed subsequent toconducting the organic radical based surface treatment process. In someembodiments, a wet process can be performed prior to the organic radicalbased surface treatment process.

Another example embodiment of the present disclosure is directed to amethod of processing a semiconductor workpiece. The workpiece includes asemiconductor material. The semiconductor material includes silicon orsilicon germanium. The method includes performing an organic radicalbased surface treatment process on the semiconductor material. Theorganic radical based surface treatment process includes: generating oneor more excited species in an inert gas in a plasma chamber by inducinga plasma in the inert gas with an inductively coupled plasma source;generating one or more organic radicals by mixing one or morehydrocarbon molecules with the excited species, wherein the one or morehydrocarbon molecules have a chemical formula of C_(n)H_(2n+2) orC_(n)H_(2n), where n is greater than or equal to 1 and less than orequal to 10; and exposing the semiconductor material to the organicradicals in a processing chamber, the processing chamber being separatedfrom the plasma chamber by the separation grid. In some embodiments, theone or more organic radicals includes a methyl (CH₃) radical.

FIG. 3 depicts an example plasma processing apparatus 100 that can beused to perform surface treatment processes according to exampleembodiments of the present disclosure. As illustrated, the plasmaprocessing apparatus 100 includes a processing chamber 110 and a plasmachamber 120 that is separated from the processing chamber 110. Theprocessing chamber 110 includes a substrate holder or pedestal 112operable to hold a workpiece 114 to be processed, such as asemiconductor wafer. In this example illustration, a plasma is generatedin the plasma chamber 120 (i.e., plasma generation region) by aninductively coupled plasma source 135 and desired species are channeledfrom the plasma chamber 120 to the surface of substrate 114 through aseparation grid assembly 200.

Aspects of the present disclosure are discussed with reference to aninductively coupled plasma source for purposes of illustration anddiscussion. Those of ordinary skill in the art, using the disclosuresprovided herein, will understand that any plasma source (e.g.,inductively coupled plasma source, capacitively coupled plasma source,etc.) can be used without deviating from the scope of the presentdisclosure.

The plasma chamber 120 includes a dielectric side wall 122 and a ceiling124. The dielectric side wall 122, the ceiling 124, and the separationgrid 200 define a plasma chamber interior 125. The dielectric side wall122 can be formed from a dielectric material, such as quartz and/oralumina. The inductively coupled plasma source 135 can include aninduction coil 130 disposed adjacent the dielectric side wall 122 aboutthe plasma chamber 120. The induction coil 130 is coupled to an RF powergenerator 134 through a suitable matching network 132. Process gases(e.g., reactant and/or carrier gases) can be provided to the chamberinterior from a gas supply 150 and an annular gas distribution channel151 or other suitable gas introduction mechanism. When the inductioncoil 130 is energized with RF power from the RF power generator 134, aplasma can be generated in the plasma chamber 120. In a particularembodiment, the plasma processing apparatus 100 can include an optionalgrounded Faraday shield 128 to reduce capacitive coupling of theinduction coil 130 to the plasma.

As shown in FIG. 3, the separation grid 200 separates the plasma chamber120 from the processing chamber 110. The separation grid 200 can be usedto perform ion filtering from a mixture generated by plasma in theplasma chamber 120 to generate a filtered mixture. The filtered mixturecan be exposed to the workpiece 114 in the processing chamber 110.

In some embodiments, the separation grid 200 can be a multi-plateseparation grid. For instance, the separation grid 200 can include afirst grid plate 210 and a second grid plate 220 that are spaced apartin parallel relationship to one another. The first grid plate 210 andthe second grid plate 220 can be separated by a distance.

The first grid plate 210 can have a first grid pattern having aplurality of holes. The second grid plate 220 can have a second gridpattern having a plurality of holes. The first grid pattern can be thesame as or different from the second grid pattern. Charged particles canrecombine on the walls in their path through the holes of each gridplate 210, 220 in the separation grid 200. Neutrals (e.g., radicals) canflow relatively freely through the holes in the first grid plate 210 andthe second grid plate 220. The size of the holes and thickness of eachgrid plate 210 and 220 can affect transparency for both charged andneutral particles.

In some embodiments, the first grid plate 210 can be made of metal(e.g., aluminum) or other electrically conductive material and/or thesecond grid plate 220 can be made from either an electrically conductivematerial or dielectric material (e.g., quartz, ceramic, etc.). In someembodiments, the first grid plate 210 and/or the second grid plate 220can be made of other materials, such as silicon or silicon carbide. Inthe event a grid plate is made of metal or other electrically conductivematerial, the grid plate can be grounded.

FIG. 4 depicts a flow diagram of an example organic radical basedsurface treatment process (300) according to example aspects of thepresent disclosure. The organic radical based surface treatment process(300) can be implemented using the plasma processing apparatus 100.However, as will be discussed in detail below, the organic radical basedsurface treatment processes according to example aspects of the presentdisclosure can be implemented using other approaches without deviatingfrom the scope of the present disclosure. FIG. 4 depicts steps performedin a particular order for purposes of illustration and discussion. Thoseof ordinary skill in the art, using the disclosures provided herein,will understand that various steps of any of the methods describedherein can be omitted, expanded, performed simultaneously, rearranged,and/or modified in various ways without deviating from the scope of thepresent disclosure. In addition, various additional steps (notillustrated) can be performed without deviating from the scope of thepresent disclosure.

At (302), the organic radical based surface treatment process caninclude heating a workpiece. For instance, the workpiece 114 can beheated in the processing chamber 110 to a process temperature. Theworkpiece 114 can be heated, for instance, using one or more heatingsystems associated with the pedestal 112. In some embodiments, theworkpiece can be heated to a process temperature in the range of about20° C. to about 400° C.

At (304), the surface treatment process can include admitting a processgas into a plasma chamber. For instance, a process gas can be admittedinto the plasma chamber interior 125 from the gas source 150 via theannular gas distribution channel 151 or other suitable gas introductionmechanism. In some embodiments, the process gas can include one or morehydrocarbon molecules. Example hydrocarbon molecules can include, forinstance, non-cyclic alkanes C_(n)H_(2n+2) where n is greater than orequal to one and less than or equal to 10. For instance, the hydrocarbonmolecules can include non-cyclic alkanes, such as methane CH₄, ethaneC₂H₆, propane or iso-propane C₃H₈, etc.

In some embodiments, the hydrocarbon molecules can include cyclicalkanes where n is greater than or equal to five and less than or equalto ten. For instance, the hydrocarbon precursor can include cyclicalkanes such as cyclopentane C₅H₁₀, cyclohexane C₆H₁₂,methyl-cyclohexane, C₇H₁₄, dimethyl-cyclohexane C₈H₁₆,1,3,5-trimethyl-cyclohexane C₉H₁₈, etc. In some embodiments, thehydrocarbon precursors can include alkenes C_(n)H_(2n), where n isgreater than or equal to two and less than or equal to ten, such asethylene C₂H₄, propene C₃H₆, etc.

At (306), the surface treatment process can include (e.g., optionallyinclude) admitting a second gas into the plasma chamber, such as areactive gas, such as hydrogen gas (H₂). For instance, the second gascan be admitted into the plasma chamber as part of a process gas. Theprocess gas can include a mixture including H₂ and N₂ and/or a mixtureincluding H₂ and He and/or a mixture including H₂ and Ar. In someembodiments, the process gas is an inert gas, such as helium, argon, orxenon.

At (308), the surface treatment process can include energizing aninductively coupled plasma source to generate a plasma in the plasmachamber. For instance, the induction coil 130 can be energized with RFenergy from the RF power generator 134 to generate a plasma in theplasma chamber interior 125. In some embodiments, the inductivelycoupled power source can be energized with pulsed power to obtaindesired radicals with reduced plasma energy. The plasma can be used togenerate one or more hydrogen radicals from the hydrogen gas.

At (310), the surface treatment process can include dissociating one ormore hydrocarbon molecules in the mixture in the plasma chamber interiorusing the plasma. For instance, a plasma induced in the plasma chamberinterior 125 using the inductively coupled plasma source 135 candissociate hydrocarbon molecules and other molecules in the process gasto generate radicals and ions. For instance, the one or more hydrocarbonmolecules can be dissociated in the plasma to generate organic radicals,such as CH₃ radicals.

At (312), the surface treatment process can include filtering one ormore ions generated by the plasma in the mixture to create a filteredmixture. The filtered mixture can include radicals generated bydissociation of the hydrocarbon molecules, such as CH₃ radicals.

In some embodiments, the one or more ions can be filtered using aseparation grid assembly separating the plasma chamber from a processingchamber where the workpiece is located. For instance, the separationgrid 200 can be used to filter ions generated by the plasma. Theseparation grid 200 can have a plurality of holes. Charged particles(e.g., ions) can recombine on the walls in their path through theplurality of holes. Neutrals (e.g., radicals such as CH₃ radicals) canpass through the holes.

In some embodiments, the separation grid 200 can be configured to filterions with an efficiency greater than or equal to about 90%, such asgreater than or equal to about 95%. A percentage efficiency for ionfiltering refers to the amount of ions removed from the mixture relativeto the total number of ions in the mixture. For instance, an efficiencyof about 90% indicates that about 90% of the ions are removed duringfiltering. An efficiency of about 95% indicates that about 95% of theions are removed during filtering.

In some embodiments, the separation grid can be a multi-plate separationgrid. The multi-plate separation grid can have multiple separation gridplates in parallel. The arrangement and alignment of holes in the gridplate can be selected to provide a desired efficiency for ion filtering,such as greater than or equal to about 95%.

For instance, the separation grid 200 can have a first grid plate 210and a second grid plate 220 in parallel relationship with one another.The first grid plate 210 can have a first grid pattern having aplurality of holes. The second grid plate 220 can have a second gridpattern having a plurality of holes. The first grid pattern can be thesame as or different from the second grid pattern. Charged particles(e.g., ions) can recombine on the walls in their path through the holesof each grid plate 210, 220 in the separation grid 200. Neutral species(e.g., radicals) can flow relatively freely through the holes in thefirst grid plate 210 and the second grid plate 220.

At (314) of FIG. 4, the surface treatment process can include exposingthe workpiece to the filtered mixture. More particularly, the workpiececan be exposed to radicals (e.g., CH₃ radicals) generated in the plasmaand passing through the separation grid assembly. As an example, organicradicals (e.g., CH₃ radicals) can pass through the separation grid 200and be exposed on the workpiece 114. In some embodiments, exposing theworkpiece to organic radicals can result in attachment of organicradicals on at least a portion of the semiconductor material.

The organic radical based surface treatment process can be implementedusing other approaches without deviating from the scope of the presentdisclosure. For instance, in some embodiments, the organic radicals canbe generated at least in part using post plasma gas injection.

For example, FIG. 5 depicts a flow diagram of an example surfacetreatment process (400) where organic radicals are generated using postplasma gas injection according to example embodiments of the presentdisclosure. The process (400) will be discussed with reference to theplasma processing apparatus 100 of FIG. 3 by way of example. FIG. 5depicts steps performed in a particular order for purposes ofillustration and discussion. Those of ordinary skill in the art, usingthe disclosures provided herein, will understand that various steps ofany of the methods described herein can be omitted, expanded, performedsimultaneously, rearranged, and/or modified in various ways withoutdeviating from the scope of the present disclosure. In addition, varioussteps (not illustrated) can be performed without deviating from thescope of the present disclosure.

At (402), the surface treatment process can include heating a workpiece.For instance, the workpiece 114 can be heated in the processing chamber110 to a process temperature. The workpiece 114 can be heated, forinstance, using one or more heating systems associated with the pedestal112. In some embodiments, the workpiece can be heated to a temperaturein the range of about 50° C. to about 400° C.

At (404), the surface treatment process can include admitting a processgas mixture into a plasma chamber. For instance, a process gas can beadmitted into the plasma chamber interior 125 from the gas source 150via the annular gas distribution channel 151 or other suitable gasintroduction mechanism. In some embodiment, the process gas can includea reactive gas, such as hydrogen gas (H₂). The process gas can include acarrier gas such as N₂ and/or He and/or Ar. For example, in someembodiments, the process gas can be a mixture including H₂ and N₂. Insome other embodiments, the process gas can be a mixture including H₂and He. In yet some other embodiments, the process gas can be a mixtureincluding H₂ and Ar.

In some embodiments, the process gas can be an inert gas. For instance,the process gas can be an inert gas with no reactive gas. In particularembodiments, the process gas can be helium, argon, xenon or other inertgas.

At (406), the surface treatment process can include energizing aninductively coupled plasma source to generate a plasma in the plasmachamber. For instance, the induction coil 130 can be energized with RFenergy from the RF power generator 134 to generate a plasma in theplasma chamber interior 125. In some embodiments, the inductivelycoupled power source can be energized with pulsed power to obtaindesired species with reduced plasma energy.

At (408), the surface treatment process can include generating one ormore species in the plasma from the process gas. For instance, a plasmainduced in the plasma chamber interior 125 from a reactive process gas(e.g., H₂) using the inductively coupled plasma source 135 candissociate molecules in the process gas mixture to generate radicals(e.g. H radicals) and ions. As another example, a plasma induced in theplasma chamber interior 125 from an inert process gas (e.g., He) usingthe inductively coupled plasma source 135 can generate one or moreexcited inert gas molecules (e.g., excited He molecules).

At (410), the surface treatment process can include filtering one ormore ions generated by the plasma in the mixture to create a filteredmixture. The filtered mixture can include species generated in theplasma from the process gas.

In some embodiments, the one or more ions can be filtered using aseparation grid assembly separating the plasma chamber from a processingchamber where the workpiece is located. For instance, the separationgrid 200 can be used to filter ions generated by the plasma.

The separation grid 200 can have a plurality of holes. Charged particles(e.g., ions) can recombine on the walls in their path through theplurality of holes. Neutral particles (e.g., radicals) can pass throughthe holes. In some embodiments, the separation grid 200 can beconfigured to filter ions with an efficiency greater than or equal toabout 90%, such as greater than or equal to about 95%.

In some embodiments, the separation grid can be a multi-plate separationgrid. The multi-plate separation grid can have multiple separation gridplates in parallel. The arrangement and alignment of holes in the gridplate can be selected to provide a desired efficiency for ion filtering,such as greater than or equal to about 95%.

At (412), the process can include injecting hydrocarbon molecules intothe filtered mixture post filtering. The hydrocarbon molecules can reactwith hydrogen radical to generate desired radicals (e.g., CH₃ radicals).

Example hydrocarbon molecules can include, for instance, non-cyclicalkanes C_(n)H_(2n+2) where n is greater than or equal to one and lessthan or equal to 10. For instance, the hydrocarbon molecules can includenon-cyclic alkanes, such as methane CH₄, ethane C₂H₆, propane oriso-propane C₃H₈, etc. The hydrocarbon molecule(s) can include cyclicalkanes C_(n)H_(2n), where n is greater than or equal to five and lessthan or equal to ten. For instance, the hydrocarbon molecule(s) caninclude cyclic alkanes such as cyclopentane C₅H₁₀, cyclohexane C₆H₁₂,methyl-cyclohexane, C₇H₁₄, dimethyl-cyclohexane C₈H₁₆,1,3,5-trimethyl-cyclohexane C₉H₁₈, etc. In some embodiments, thehydrocarbon molecule(s) can include alkenes C_(n)H_(2n), where n isgreater than or equal to one and less than or equal to ten, such asethylene C₂H₄, propene C₃H₆, etc.

FIG. 6 depicts an example separation grid 200 for injection ofhydrocarbon molecules post ion filtering according to exampleembodiments of the present disclosure. More particularly, the separationgrid 200 includes a first grid plate 210 and a second grid plate 220disposed in parallel relationship for ion/UV filtering.

The first grid plate 210 and a second grid plate 220 can be in parallelrelationship with one another. The first grid plate 210 can have a firstgrid pattern having a plurality of holes. The second grid plate 220 canhave a second grid pattern having a plurality of holes. The first gridpattern can be the same as or different from the second grid pattern.Neutral and charged particles 215 from the plasma can be exposed to theseparation grid 200. Charged particles (e.g., ions) can recombine on thewalls in their path through the holes of each grid plate 210, 220 in theseparation grid 200. Neutral species (e.g., H radicals or excited inertgas molecules) can flow relatively freely through the holes in the firstgrid plate 210 and the second grid plate 220.

Subsequent to the second grid plate 220, a gas injection source 230 canbe configured to admit hydrocarbon gas into the filtered mixture.Radicals (e.g., CH₃ radicals) 225 resulting from the injection ofhydrocarbon gas can pass through a third grid plate 235 for exposure tothe workpiece.

The present example is discussed with reference to a separation gridwith three grid plates for example purposes. Those of ordinary skill inthe art, using the disclosures provided herein, will understand thatmore or fewer grid plates can be used without deviating from the scopeof the present disclosure.

At (414) of FIG. 5, the surface treatment process can include exposingthe workpiece to the filtered mixture. More particularly, the workpiececan be exposed to radicals (e.g., CH₃ radicals) after injection of thehydrocarbon molecules. As an example, radicals (e.g., CH₃ radicals) canpass through the third grid plate 235 (FIG. 6) and can be exposed on theworkpiece 114. In some embodiments, exposing the workpiece to organicradicals can result in methylation of at least a portion of thesemiconductor material.

In some embodiments, the hydrogen radicals can be generated using adifferent source of hydrogen radicals. For instance, as shown in FIG. 7,a hydrogen gas H₂ can be passed over a heated filament (e.g., a tungstenfilament) to generate hydrogen radicals in a first chamber. The hydrogenradicals can be passed through the separation grid 200.

The separation grid 200 includes a first grid plate 210 and a secondgrid plate 220 disposed in parallel relationship. The first grid plate210 can have a first grid pattern having a plurality of holes. Thesecond grid plate 220 can have a second grid pattern having a pluralityof holes. The first grid pattern can be the same as or different fromthe second grid pattern.

Subsequent to the first grid plate 210, the gas injection source 230 canbe configured to admit hydrocarbon gas into the filtered mixture.Radicals (e.g., CH₃) radicals 264 resulting from the injection ofhydrocarbon gas can pass through the second grid plate 220 for exposureto the workpiece.

The hydrocarbon gas can include one or more hydrocarbon molecules.Example hydrocarbon molecules can include, for instance, non-cyclicalkanes C_(n)H_(2n+2) where n is greater than or equal to one and lessthan or equal to 10. For instance, the hydrocarbon molecules can includenon-cyclic alkanes, such as methane CH₄, ethane C₂H₆, propane oriso-propane C₃H₈, etc. The hydrocarbon molecule(s) can include cyclicalkanes C_(n)H_(2n), where n is greater than or equal to five and lessthan or equal to ten. For instance, the hydrocarbon molecule(s) caninclude cyclic alkanes such as cyclopentane C₅H₁₀, cyclohexane C₆H₁₂,methyl-cyclohexane, C₇H₁₄, dimethyl-cyclohexane C₈H₁₆,1,3,5-trimethyl-cyclohexane C₉H₁₈, etc. In some embodiments, thehydrocarbon molecule(s) can include alkenes C_(n)H_(2n), where n isgreater than or equal to one and less than or equal to ten, such asethylene C₂H₄, propene C₃H₆, etc.

The present example is discussed with reference to a separation gridwith two grid plates for example purposes. Those of ordinary skill inthe art, using the disclosures provided herein, will understand thatmore or fewer grid plates can be used without deviating from the scopeof the present disclosure.

The organic radicals (e.g., CH₃ radicals) can be generated using otherapproaches with deviating from the scope of the present disclosure. Asone example, organic radicals (e.g., CH₃ radicals) can be generatedusing pyrolysis (thermal decomposition) of molecules (e.g., azomethaneCH₃—N═N—CH₃). As another example, organic radicals can be generated orUV-assisted molecule dissociation (e.g., acetone CH₃COCH₃).

FIG. 8 depicts a flow diagram of one example method (500) forsemiconductor device fabrication according to example aspects of thepresent disclosure. The method (500) will be discussed with reference tothe plasma processing apparatus 100 of FIG. 3 by way of example. Themethod (500) can be implemented in any suitable processing apparatushaving a first chamber separated from a second chamber, for instance, bya separation grid. FIG. 8 depicts steps performed in a particular orderfor purposes of illustration and discussion. Those of ordinary skill inthe art, using the disclosures provided herein, will understand thatvarious steps of any of the methods described herein can be omitted,expanded, performed simultaneously, rearranged, and/or modified invarious ways without deviating from the scope of the present disclosure.In addition, various steps (not illustrated) can be performed withoutdeviating from the scope of the present disclosure.

At (502), the method can include conditioning a processing apparatus forconducting an organic radical based surface treatment process accordingto example embodiments of the present disclosure. For instance, themethod can include conditioning the plasma chamber 120 and/or theprocessing chamber 110 for conducting a surface treatment process. Insome embodiments, conditioning the plasma processing apparatus 100 caninclude generating an oxygen-based plasma in the plasma chamber 120before introduction of a workpiece into the processing chamber 110.Other oxidation-based chemistry processes can be performed to conditionthe plasma processing apparatus without deviating from the scope of thepresent disclosure.

At (504), the method can include placing a workpiece in the processingchamber of the plasma processing apparatus. The processing chamber canbe separated from the plasma chamber (e.g., separated by a separationgrid assembly). For instance, the method can include placing theworkpiece 114 onto the pedestal 112 in the processing chamber 110.

Referring to FIG. 8, the method can include performing an organicradical based surface treatment process (506) according to exampleaspects of the present disclosure. The organic radical based surfacetreatment process can be any organic radical based surface treatmentprocess disclosed herein. For instance, the organic radical basedsurface treatment process can be the example surface treatmentprocess(s) discussed with reference to FIGS. 4-7. The organic radicalbased surface treatment process can be a methyl radical based processresulting in methylation of at least a portion of a surface of thesemiconductor material.

In some embodiments, the organic radical based surface treatment processcan be performed at the same time as a dry strip process as a singlestep. For instance, in this example embodiment, the plasma source 135can be used to generate one or more hydrogen radicals from a process gasin the plasma chamber 120. The process gas can include, for instance, amixture of H₂ and N₂ and/or a mixture of H₂ and He and/or a mixture ofH₂ and Ar. The plasma source 135 can also be used to dissociate one ormore hydrocarbon molecules to generate organic radicals (e.g., CH₃radicals) as part of the same process step. The radicals (e.g.,including CH₃ radicals) can pass through the separation grid 200 to theprocessing chamber 110 for exposure to the workpiece 114. The radicalscan be used, for instance, for removal of a photoresist, residue, orother material. The CH₃ radicals can form a protective layer on Siand/or SiGe surfaces on the workpiece to reduce material loss of the Siand/or SiGe surfaces during the dry strip process.

At (508) of FIG. 8, the method can include removing the workpiece fromthe processing chamber. For instance, the workpiece 114 can be removedfrom the pedestal 112 in the processing chamber 110. The plasmaprocessing apparatus can then be conditioned for future processing ofadditional workpieces.

FIG. 9 depicts a flow diagram of one example method (600) forsemiconductor device fabrication according to example aspects of thepresent disclosure. The method (600) will be discussed with reference tothe plasma processing apparatus 100 of FIG. 3 by way of example. Themethod (600) can be implemented in any suitable processing apparatushaving a first chamber separated from a second chamber, for instance, bya separation grid. FIG. 9 depicts steps performed in a particular orderfor purposes of illustration and discussion. Those of ordinary skill inthe art, using the disclosures provided herein, will understand thatvarious steps of any of the methods described herein can be omitted,expanded, performed simultaneously, rearranged, and/or modified invarious ways without deviating from the scope of the present disclosure.In addition, various steps (not illustrated) can be performed withoutdeviating from the scope of the present disclosure.

At (602), the method can include conditioning a processing apparatus forconducting an organic radical based surface treatment process accordingto example embodiments of the present disclosure. For instance, themethod can include conditioning the plasma chamber 120 and/or theprocessing chamber 110 for conducting a surface treatment process. Insome embodiments, conditioning the plasma processing apparatus 100 caninclude generating an oxygen-based plasma in the plasma chamber 120before introduction of a workpiece into the processing chamber 110.Other oxidation-based chemistry processes can be performed to conditionthe plasma processing apparatus without deviating from the scope of thepresent disclosure.

At (604), the method can include placing a workpiece in the processingchamber of the plasma processing apparatus. The processing chamber canbe separated from the plasma chamber (e.g., separated by a separationgrid assembly). For instance, the method can include placing theworkpiece 114 onto the pedestal 112 in the processing chamber 110.

At (606), the method can include performing a dry strip process. The drystrip process can be performed as a separate step relative to theorganic radical based surface treatment process. The dry strip processcan include inducing a plasma in a process gas in the plasma chamber 120using an inductively coupled plasma source 135 to generate one or moreions and radicals. The process gas can be, for instance, a mixturehaving H₂ and N₂ and/or a mixture having H₂ and He and/or a mixturehaving H₂ and Ar. The ions and radicals can be provided to a separationgrid. The separation grid can filter one or more ions and allow theradicals to pass through the separation grid to a processing chamber forexposure to the workpiece. The radicals can be used, for instance, forphotoresist removal or other dry strip process.

At (608), the method can include performing an organic radical basedsurface treatment process according to example aspects of the presentdisclosure. The organic radical based surface treatment process can beany organic radical based surface treatment process disclosed herein.For instance, the organic radical based surface treatment process can bethe example surface treatment process(s) discussed with reference toFIGS. 4-7. The organic radical based surface treatment process can be amethyl radical based process resulting in methylation of at least aportion of a surface of the semiconductor material.

At (610) of FIG. 9, the method can include removing the workpiece fromthe processing chamber. For instance, the workpiece 114 can be removedfrom the pedestal 112 in the processing chamber 110. The plasmaprocessing apparatus can then be conditioned for future processing ofadditional workpieces.

In some embodiments, the organic radical based surface treatment processaccording to example embodiments of the present disclosure can beperformed in conjunction with a wet process (e.g., wet clean processand/or wet etch process). For instance, the organic radical basedsurface treatment process can expose materials on a workpiece to organicradicals (e.g., CH₃ radicals). The organic radicals can adjust a surfacewetting angle of the material to improve wet process performance.

As an example, FIG. 10 depicts a workpiece 700 with a silicon containingdielectric layer 704 (e.g., SiO₂ layer and/or Si₃N₄ layer) on asubstrate 702 (e.g., a Si substrate). A chemical solution 710 usedduring a wet process can be spread across a surface of the siliconcontaining dielectric layer as a result of hydrophilic properties of thesilicon containing dielectric layer. More particularly, the siliconcontaining dielectric layer 704 before performing an organic radicalbased surface treatment process according to aspects of the presentdisclosure is not relatively hydrophobic (e.g., is hydrophilic).

As shown in FIG. 10 at 705, after performing an organic radical basedsurface treatment process according to example aspects of the presentdisclosure as indicated by arrow 730, the surface properties of thesilicon containing dielectric layer 704 can be changed to be morehydrophobic. This can result from exposure of the silicon containingdielectric layer 704 to organic radicals (e.g., CH₃) during the surfacetreatment process. As shown, a chemical solution 720 used during the wetprocess can be beaded on the surface of the silicon containingdielectric layer 704. In this way, the organic radical based surfacetreatment process according to example aspects of the present disclosurecan be used for adjusting of surface wetting angle, allowing forimprovement of wet processes, such as wet clean processes and/or wetetch processes.

Example aspects of the present disclosure are discussed with referenceto adjusting a surface wetting angle of a silicon-containing dielectricmaterial (e.g., silicon oxide and/or silicon nitride) for purposes ofillustration and discussion. Those of ordinary skill in the art, usingthe disclosures provided herein, will understand that organic radicalbased surface treatment processes according to example aspects of thepresent disclosure can be used to adjust properties of other suitablematerials on a workpiece without deviating from the scope of the presentdisclosure.

FIG. 11 depicts a flow diagram of one example method (800) forsemiconductor device fabrication according to example aspects of thepresent disclosure. The method (800) will be discussed with reference tothe plasma processing apparatus 100 of FIG. 3 by way of example. Themethod (800) can be implemented in any suitable processing apparatushaving a first chamber separated from a second chamber, for instance, bya separation grid. FIG. 11 depicts steps performed in a particular orderfor purposes of illustration and discussion. Those of ordinary skill inthe art, using the disclosures provided herein, will understand thatvarious steps of any of the methods described herein can be omitted,expanded, performed simultaneously, rearranged, and/or modified invarious ways without deviating from the scope of the present disclosure.In addition, various steps (not illustrated) can be performed withoutdeviating from the scope of the present disclosure.

At (802), the method can include performing a wet process. The wetprocess can include, for instance, a wet clean process and/or a wet etchprocess. The wet process can include exposing the workpiece to achemical solution (e.g., an aqueous chemical solution). The chemicalsolution can be used, for instance, to remove various residues or othermaterials from the workpiece.

At (804), the method can include placing a workpiece in a processingchamber of a plasma processing apparatus. The processing chamber can beseparate from a plasma chamber (e.g., separated by a separation gridassembly). For instance, the method can include placing the workpiece114 onto the pedestal 112 in the processing chamber 110.

Referring to FIG. 11, the method can include performing an organicradical based surface treatment process (806) according to exampleaspects of the present disclosure. The organic radical based surfacetreatment process can be any organic radical based surface treatmentprocess disclosed herein. For instance, the organic radical basedsurface treatment process can be the example surface treatmentprocess(s) discussed with reference to FIGS. 4-7. The organic radicalbased surface treatment process can be an organic radical based processresulting in methylation of at least a portion of a surface of theworkpiece.

The organic radical based surface treatment process can be used toadjust a surface wetting angle of a material (e.g., a silicon containingdielectric material) on the workpiece. For instance, the organic radicalbased surface treatment property can be used to make a material morehydrophobic to cause chemical solutions used during the wet cleanprocess to bead up on the material. This can facilitate removal of thechemical solution from the workpiece. In this way, the surface treatmentprocess can be used to reduce materials corrosion and surfacedeterioration, and reduce particulate formation resulting from chemicalresidues remaining on a workpiece after a wet process.

At (808) of FIG. 11, the method can include removing the workpiece fromthe processing chamber. For instance, the workpiece 114 can be removedfrom the pedestal 112 in the processing chamber 110.

FIG. 12 depicts a flow diagram of one example method (900) forsemiconductor device fabrication according to example aspects of thepresent disclosure. The method (900) will be discussed with reference tothe plasma processing apparatus 100 of FIG. 3 by way of example. Themethod (900) can be implemented in any suitable processing apparatushaving a first chamber separated from a second chamber, for instance, bya separation grid. FIG. 12 depicts steps performed in a particular orderfor purposes of illustration and discussion. Those of ordinary skill inthe art, using the disclosures provided herein, will understand thatvarious steps of any of the methods described herein can be omitted,expanded, performed simultaneously, rearranged, and/or modified invarious ways without deviating from the scope of the present disclosure.In addition, various steps (not illustrated) can be performed withoutdeviating from the scope of the present disclosure.

At (902), the method can include placing a workpiece in a processingchamber of a plasma processing apparatus. The processing chamber can beseparated from a plasma chamber (e.g., separated by a separation gridassembly). For instance, the method can include placing the workpiece114 onto the pedestal 112 in the processing chamber 110.

At (904), the method can include performing an organic radical basedsurface treatment process according to example aspects of the presentdisclosure. The organic radical based surface treatment process can beany organic radical based surface treatment process disclosed herein.For instance, the organic radical based surface treatment process can bethe example surface treatment process(s) discussed with reference toFIGS. 4-7. The organic radical based surface treatment process can be amethyl radical based process resulting in methylation of at least aportion of a surface of the workpiece.

The organic radical based surface treatment process can be used toadjust a surface wetting angle of a material (e.g., a silicon containingdielectric material) on the workpiece. For instance, the organic radicalbased surface treatment property can be used to make a material morehydrophobic to cause chemical solutions used during the wet cleanprocess to bead up on the material.

At (906) of FIG. 12, the method can include removing the workpiece fromthe processing chamber. For instance, the workpiece 114 can be removedfrom the pedestal 112 in the processing chamber 110.

At (908), the method can include performing a wet process. The wetprocess can include, for instance, a wet clean process and/or a wet etchprocess. The wet process can include exposing the workpiece to achemical solution (e.g., a liquid chemical solution). The chemicalsolution can be used, for instance, to remove various residues or othermaterials from the workpiece.

By conducting the organic radical based surface treatment process priorto the wet process, the surface wetting angle of various materials onthe workpiece can be tuned to provide improved process performanceduring the wet process. This can facilitate chemical cleaning on top ofand inside patterned structures, and at the same time modulate surfacetension to avoid high aspect ratio pattern collapse. In addition, anorganic radical based surface treatment process can passivate thesurface with a stable layer of organic groups. This can reduce chemicalattack on workpiece materials and reduce undesirable materials loss ormaterials alteration (e.g. oxidation).

While the present subject matter has been described in detail withrespect to specific example embodiments thereof, it will be appreciatedthat those skilled in the art, upon attaining an understanding of theforegoing may readily produce alterations to, variations of, andequivalents to such embodiments. Accordingly, the scope of the presentdisclosure is by way of example rather than by way of limitation, andthe subject disclosure does not preclude inclusion of suchmodifications, variations and/or additions to the present subject matteras would be readily apparent to one of ordinary skill in the art.

What is claimed is:
 1. A method for processing a workpiece, theworkpiece comprising a semiconductor material, the method comprisingperforming an organic radical based surface treatment process on theworkpiece, the organic radical based surface treatment processcomprising: generating one or more species using a plasma induced in afirst chamber; filtering the one or more species generated by the plasmato create a first mixture; injecting one or more hydrocarbon moleculesinto the first mixture post filtering to create a second mixture, thesecond mixture comprising one or more organic radicals; and exposing thesemiconductor material to the second mixture in a second chamber,wherein the second chamber being separated from the first chamber. 2.The method of claim 1, wherein the semiconductor material comprisessilicon.
 3. The method of claim 1, wherein the semiconductor materialcomprises silicon germanium.
 4. The method of claim 1, wherein the oneor more organic radicals are generated by dissociating the one or morehydrocarbon molecules in the first chamber.
 5. The method of claim 1,wherein the one or more hydrocarbon molecules have a chemical formula ofC_(n)H_(2n+2), where n is greater than or equal to 1 and less than orequal to
 10. 6. The method of claim 1, wherein the one or morehydrocarbon molecules have a chemical formula of C_(n)H_(2n), where n isgreater than or equal to 2 and n is less than or equal to
 10. 7. Themethod of claim 1, wherein the one or more organic radicals aregenerated by reaction of the one or more hydrocarbon molecules with thespecies.
 8. The method of claim 1, wherein the one or more organicradicals comprise a CH₃ radical.
 9. The method of claim 1, wherein theorganic radical based surface treatment process results in methylationon at least a portion of the semiconductor material.
 10. The method ofclaim 1, wherein the one or more species are generated by the plasmainduced in a process gas in the first chamber.
 11. The method of claim10, wherein the process gas is an inert gas.
 12. The method of claim 11,wherein the inert gas is helium.
 13. The method of claim 10, wherein theprocess gas comprises a hydrogen gas and the species comprise hydrogenradicals.
 14. The method of claim 1, wherein the species comprise one ormore hydrogen radicals generated using a heated filament.
 15. The methodof claim 1, wherein the one or more organic radicals are generated usingpyrolysis of molecules or UV-assisted molecule dissociation.
 16. Themethod of claim 10, wherein the method comprises filtering one or moreions using a separation grid separating the first chamber from thesecond chamber.
 17. The method of claim 1, wherein the workpiececomprises a silicon containing dielectric layer.
 18. The method of claim17, wherein the organic radical based surface treatment process isconducted on the silicon containing dielectric layer to adjust a surfacewetting angle of the silicon containing dielectric layer.
 19. The methodof claim 18, wherein subsequent to conducting the organic radical basedsurface treatment process, the method comprises performing a wet processon the workpiece.
 20. The method of claim 18, wherein prior toconducting the organic radical based surface treatment process, themethod comprises performing a wet process on the workpiece.
 21. Themethod of claim 17, wherein the silicon containing dielectric layercomprises a silicon oxide layer, wherein oxygen to silicon ratio exceeds1 in the silicon oxide layer.
 22. The method of claim 17, wherein thesilicon containing dielectric layer comprises a silicon nitride layer,wherein nitrogen to silicon ratio exceeds 0.5 in the silicon nitridelayer.
 23. A method of processing a semiconductor workpiece, theworkpiece comprising a semiconductor material, the semiconductormaterial comprising silicon or silicon germanium, the method comprisingperforming an organic radical based surface treatment process on thesemiconductor material, the organic radical based surface treatmentprocess comprising: generating one or more excited species in an inertgas in a plasma chamber by inducing a plasma in the inert gas with aninductively coupled plasma source; filtering the one or more excitedspecies generated by the plasma to create a first mixture; generatingone or more organic radicals by injecting one or more hydrocarbonmolecules into the first mixture post filtering, wherein the one or morehydrocarbon molecules have a chemical formula of C_(n)H_(2n+2) orC_(n)H_(2n), where n is greater than or equal to 1 and less than orequal to 10; and exposing the semiconductor material to the organicradicals in a processing chamber, the processing chamber being separatedfrom the plasma chamber by a separation grid.
 24. The method of claim23, wherein the one or more organic radicals comprises a methyl (CH₃)radical.